Nonlinear effects in ultrasmall silicon-on-insulator ring resonators

Gino Priem; Pieter Dumon; Wim Bogaerts; Dries Van Thourhout; Geert Morthier; Roel Baets

doi:10.1117/12.668249

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20 April 2006 Nonlinear effects in ultrasmall silicon-on-insulator ring resonators

Gino Priem, Pieter Dumon, Wim Bogaerts, Dries Van Thourhout, Geert Morthier, Roel Baets

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Proceedings Volume 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits; 61831A (2006) https://doi.org/10.1117/12.668249
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

We investigate the significance of secondary effects caused by free carrier accumulation and subsequent heating on the nonlinear behaviour of ultrasmall Silicon-On-Insulator ring resonators. All-optical bistability based on thermal dispersion was experimentally obtained for an input power of only 0.28mW. At higher powers, pulsating behaviour was observed which is problematic for the stability of thermal memory and switching operations. Using free carrier dispersion, we also demonstrate all-optical wavelength conversion with a pulse length of 10 ns, indicating that bitrates of 0.1 Gb/s are feasible. Also here, the presence of unstable pulsations was observed, leading to significant errors in the converted data pattern.

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Gino Priem, Pieter Dumon, Wim Bogaerts, Dries Van Thourhout, Geert Morthier, and Roel Baets "Nonlinear effects in ultrasmall silicon-on-insulator ring resonators", Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61831A (20 April 2006); https://doi.org/10.1117/12.668249

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