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20 April 2006 Raman approach for study of amplification in porous silicon at 1.5μm
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Abstract
In the last years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved great results. However, some significant limitations, inherent to the physics of silicon, have been pointed out, too. In order to overcome these limitations, a possible option is to consider low dimensional silicon. On this line of argument, an approach based on Raman scattering in porous silicon is presented. We prove two significant advantage with respect to silicon: the broadening of spontaneous Raman emission and the tuning of the Stokes shift. Finally, we discuss about the prospect of Raman amplifier in porous silicon.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Ferrara, L. Sirleto, B. Jalali, and I. Rendina "Raman approach for study of amplification in porous silicon at 1.5μm", Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61831U (20 April 2006); https://doi.org/10.1117/12.663432
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