Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

U. T. Schwarz; C. Lauterbach; M. O. Schillgalies; C. Rumbolz; M. Furitsch; A. Lell; V. Härle

doi:10.1117/12.662019

14 April 2006 Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

U. T. Schwarz, C. Lauterbach, M. O. Schillgalies, C. Rumbolz, M. Furitsch, A. Lell, V. Härle

Proceedings Volume 6184, Semiconductor Lasers and Laser Dynamics II; 61840K (2006) https://doi.org/10.1117/12.662019
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3 μm narrow and a 10 μm wide ridge waveguide laser diode.

Citation Download Citation

U. T. Schwarz, C. Lauterbach, M. O. Schillgalies, C. Rumbolz, M. Furitsch, A. Lell, and V. Härle "Time-resolved scanning near-field microscopy of InGaN laser diode dynamics", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61840K (14 April 2006); https://doi.org/10.1117/12.662019

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