Paper
21 April 2006 Monolithically integrated transceiver chips for bidirectional optical interconnection
Martin Stach, Manikandan Chandran, Fernando Rinaldi, Steffen Lorch, Ihab Kardosh, Hendrik Roscher, Philipp Gerlach, Rainer Michalzik
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Abstract
We report on the design, fabrication and test results of monolithically integrated transceiver chips consisting of GaAs metal-semiconductor-metal photodiodes and 850nm wavelength vertical-cavity surface-emitting lasers. These chips are well suited for low-cost and compact bidirectional optical interconnection at Gbit/s data rates in mobile systems and industrial or home networks employing large core size multimode fibers.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Stach, Manikandan Chandran, Fernando Rinaldi, Steffen Lorch, Ihab Kardosh, Hendrik Roscher, Philipp Gerlach, and Rainer Michalzik "Monolithically integrated transceiver chips for bidirectional optical interconnection", Proc. SPIE 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 61850Q (21 April 2006); https://doi.org/10.1117/12.662819
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Cited by 2 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Optical fibers

Transceivers

Data transmission

Photodiodes

Gallium arsenide

Optical interconnects

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