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21 April 2006 Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs
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Abstract
In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. Pougeoise, Ph. Gilet, Ph. Grosse, S. Poncet, A. Chelnokov, J.-M. Gérard, G. Bourgeois, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren, Sébastien Vilain, J.-S. Bouillard, G. Lerondel, R. Bachelot, and P. Royer "Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs", Proc. SPIE 6185, Micro-Optics, VCSELs, and Photonic Interconnects II: Fabrication, Packaging, and Integration, 61850U (21 April 2006); https://doi.org/10.1117/12.662118
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