Infrared and Raman comparative study of Yb-doped Y2SiO5 thin films and single crystals

Aurélie Denoyer; Serge Jandl; Bruno Viana; Olivier Guillot-Noël; Philippe Goldner; Denis Pelenc; Florent Thibault

doi:10.1117/12.661184

17 April 2006 Infrared and Raman comparative study of Yb-doped Y₂SiO₅ thin films and single crystals

Aurélie Denoyer, Serge Jandl, Bruno Viana, Olivier Guillot-Noël, Philippe Goldner, Denis Pelenc, Florent Thibault

Proceedings Volume 6190, Solid State Lasers and Amplifiers II; 619017 (2006) https://doi.org/10.1117/12.661184
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

In this study Yb-doped Y₂SiO₅ single crystals and thin films crystal field excitations and Raman active phonons characteristics have been compared using infrared absorption and Raman spectroscopy. The thin films high quality has been confirmed and their ability to adjust by co-doping various properties such as the Yb³⁺ sites occupations and Yb³⁺-Yb³⁺ pair interactions have been evidenced.

Citation Download Citation

Aurélie Denoyer, Serge Jandl, Bruno Viana, Olivier Guillot-Noël, Philippe Goldner, Denis Pelenc, and Florent Thibault "Infrared and Raman comparative study of Yb-doped Y₂SiO₅ thin films and single crystals", Proc. SPIE 6190, Solid State Lasers and Amplifiers II, 619017 (17 April 2006); https://doi.org/10.1117/12.661184

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