Paper
20 April 2006 Photo-induced phenomena in organic field-effect phototransistors based on conjugated polymer/fullerene blends and organic dielectric
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Abstract
Photo-induced phenomena were investigated in photoresposive organic field-effect transistors (photOFETs) based on conjugated polymer/fullerene solid-state mixtures as active semiconductor layer and divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) as gate dielectrics. The devices were characterized both in under dark showing n-type transistor behaviour with linear and saturated mobility of 1.7 x 10-3 cm2/Vs and 2.7 x 10-2 cm2/Vs respectively, and under white light illumination condition, where large shifts in the threshold voltage in the transfer characteristics were obtained. A typical phototransistor behaviour in a wide range of illumination intensities are observed in these devices.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Marjanović, Th. B. Singh, G. Dennler, S. Günes, R. Koeppe, H. Neugebauer, N. S. Sariciftci, and S. Bauer "Photo-induced phenomena in organic field-effect phototransistors based on conjugated polymer/fullerene blends and organic dielectric", Proc. SPIE 6192, Organic Optoelectronics and Photonics II, 61921D (20 April 2006); https://doi.org/10.1117/12.663042
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Cited by 5 scholarly publications.
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KEYWORDS
Polymers

Transistors

Dielectrics

Phototransistors

Field effect transistors

Semiconductors

Silicon

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