Electronic excitation energy transfer from dye-loaded zeolite L monolayers to a semiconductor

Huanrong Li; André Devaux; Arantzazu Zabala Ruiz; Gion Calzaferri

doi:10.1117/12.661270

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20 April 2006 Electronic excitation energy transfer from dye-loaded zeolite L monolayers to a semiconductor

Huanrong Li, André Devaux, Arantzazu Zabala Ruiz, Gion Calzaferri

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Proceedings Volume 6195, Nanophotonics; 61951G (2006) https://doi.org/10.1117/12.661270
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

In device engineering, a high degree of supramolecular organisation is required to achieve certain desired macroscopic properties. Dye-loaded zeolite L host-guest materials have been successfully used in the realisation of efficient light-harvesting antenna systems. A new hierarchy of structural order is introduced by arranging the zeolite L crystals into densely packed, oriented monolayers on a substrate. We developed methods to synthesise such monolayers, to fill them with dyes and to terminate them with a luminescent stopcock. By the subsequent insertion of different types of dye molecules in a zeolite L monolayer, the first unidirectional antenna system was realised. Such antenna materials open possibilities for the design of a novel thin layer, silicon based solar cell, where the excitation energy can only migrate in one direction towards the zeolite-semiconductor interface. The electronic excitation energy is then transmitted to the semiconductor by Forster resonance energy transfer (FRET) via stopcock molecules attached to the channel ends. Direct transfer of electrons is prevented by an insulating layer. We report here on the UV-VIS absorption as well as NIR luminescence spectroscopy results obtained from such materials.

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Huanrong Li, André Devaux, Arantzazu Zabala Ruiz, and Gion Calzaferri "Electronic excitation energy transfer from dye-loaded zeolite L monolayers to a semiconductor", Proc. SPIE 6195, Nanophotonics, 61951G (20 April 2006); https://doi.org/10.1117/12.661270

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