Dilute antimonide nitrides for very long wavelength infrared applications

Tim Ashley; Louise Buckle; Gilbert W. Smith; Ben N. Murdin; Paul H. Jefferson; Louis F. J. Piper; Tim D. Veal; Chris F. McConville

doi:10.1117/12.667232

17 May 2006 Dilute antimonide nitrides for very long wavelength infrared applications

Tim Ashley, Louise Buckle, Gilbert W. Smith, Ben N. Murdin, Paul H. Jefferson, Louis F. J. Piper, Tim D. Veal, Chris F. McConville

Author Affiliations +

Proceedings Volume 6206, Infrared Technology and Applications XXXII; 62060L (2006) https://doi.org/10.1117/12.667232
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

The addition of small amounts of nitrogen to III-V semiconductors leads to a large degree of band-gap bowing, giving rise to band-gaps smaller than in the associated binary materials. The addition of a small percentage of nitrogen to GaSb or InSb is predicted to move their response wavelengths into the long or even very long wavelength IR ranges. We report the growth of GaN_xSb_1-x by MBE, using an r.f. plasma nitrogen source, examining the influence of plasma power, substrate temperature and growth rate. We demonstrate high structural quality, as determined by x-ray diffraction, and show a reduction in band-gap by over 300meV, compared with GaSb, based on FTIR transmission spectroscopy. We also report initial experiments on the growth of InN_xSb_1-x and Ga_1-yIn_yN_xSb_1-x, with a view to extending the response into the long and very long wavelength IR ranges.

Citation Download Citation

Tim Ashley, Louise Buckle, Gilbert W. Smith, Ben N. Murdin, Paul H. Jefferson, Louis F. J. Piper, Tim D. Veal, and Chris F. McConville "Dilute antimonide nitrides for very long wavelength infrared applications", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060L (17 May 2006); https://doi.org/10.1117/12.667232

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