Progress in MBE grown type-II superlattice photodiodes

Cory J. Hill; Jian V. Li; Jason M. Mumolo; Sarath D. Gunapala

doi:10.1117/12.672827

17 May 2006 Progress in MBE grown type-II superlattice photodiodes

Cory J. Hill, Jian V. Li, Jason M. Mumolo, Sarath D. Gunapala

Proceedings Volume 6206, Infrared Technology and Applications XXXII; 62060P (2006) https://doi.org/10.1117/12.672827
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12μm range. Recent devices have produced detectivities as high as 8x10¹⁰ Jones with a differential resistance-area product greater than 6 Ohmcm² at 80K with a long wavelength cutoff of approximately 12μm. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11μm range without antireflection coatings.

Citation Download Citation

Cory J. Hill, Jian V. Li, Jason M. Mumolo, and Sarath D. Gunapala "Progress in MBE grown type-II superlattice photodiodes", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62060P (17 May 2006); https://doi.org/10.1117/12.672827

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