Paper
18 May 2006 Resonant-cavity-enhanced HgCdTe photodetectors
Author Affiliations +
Abstract
Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Responsivity has been measured and shows a peak responsivity of 8 x 104 V/W for a 50 X 50 μm2 photoconductor at a temperature of 200K. The measured responsivity shows good agreement with the modelled responsivity across the mid-wave infrared window (3-5μm). The measured responsivity is limited by surface recombination, which limits the effective lifetime to ~15ns. The optical cut-off of the detector varies with temperature as modelled from 5.1 um at 80K to 4.4 um at 250K. There is strong agreement between modelled and measured peak responsivity as a function of temperature from 80-300K.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. G. A. Wehner, C. A. Musca, R. H. Sewell, J. M. Dell, and L. Faraone "Resonant-cavity-enhanced HgCdTe photodetectors", Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62062K (18 May 2006); https://doi.org/10.1117/12.661443
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mirrors

Mercury

Cadmium

Tellurium

Sensors

Photoresistors

Oxides

Back to Top