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Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors
have been modelled and fabricated based on these structures. Responsivity has been measured and shows a
peak responsivity of 8 x 104 V/W for a 50 X 50 μm2 photoconductor at a temperature of 200K. The measured
responsivity shows good agreement with the modelled responsivity across the mid-wave infrared window (3-5μm).
The measured responsivity is limited by surface recombination, which limits the effective lifetime to ~15ns. The
optical cut-off of the detector varies with temperature as modelled from 5.1 um at 80K to 4.4 um at 250K.
There is strong agreement between modelled and measured peak responsivity as a function of temperature from
80-300K.
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J. G. A. Wehner, C. A. Musca, R. H. Sewell, J. M. Dell, L. Faraone, "Resonant-cavity-enhanced HgCdTe photodetectors," Proc. SPIE 6206, Infrared Technology and Applications XXXII, 62062K (18 May 2006); https://doi.org/10.1117/12.661443