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5 May 2006 Sb-heterostructure diode detector W-band NEP and NEDT optimization
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Abstract
Sb-heterostructure diodes have become the detector of choice for W-band millimeter wave imaging cameras now being commercialized or in prototype development. Here we optimize the diode impedance to yield a minimum noise equivalent power (NEP). The goal is to decrease the gain required of the front-end LNA. Measured W-band sensitivities for two diodes are 3500 and 5500V/W. Their zero bias differential resistance values imply Johnson noise limited NEP's of 0.98 and 0.83pW/Hz1/2, respectively, much less than obtained from conventional biased Schottky diodes. A MMIC version of the diode detector has been simulated with an integrated bandwidth of ~ 30 GHz at W-band. The simulated temperature sensitivity (NEΔT) with an HRL W-band LNA on the front end is <1°K.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. P. Moyer, R. L. Bowen, J. N. Schulman, D. H. Chow, S. Thomas III, T. Y. Hsu, J. J. Lynch, and K. S. Holabird "Sb-heterostructure diode detector W-band NEP and NEDT optimization", Proc. SPIE 6211, Passive Millimeter-Wave Imaging Technology IX, 62110J (5 May 2006); https://doi.org/10.1117/12.667284
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