Characterization of nanomechanical and piezoelectric properties of AlN thin film for thin film bulk acoustic wave resonators

Qingming Chen; Fang Li; Qing-Ming Wang

doi:10.1117/12.668203

18 May 2006 Characterization of nanomechanical and piezoelectric properties of AlN thin film for thin film bulk acoustic wave resonators

Qingming Chen, Fang Li, Qing-Ming Wang

Author Affiliations +

Proceedings Volume 6223, Micro (MEMS) and Nanotechnologies for Space Applications; 62230I (2006) https://doi.org/10.1117/12.668203
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

In last few years, with the strong progress in thin film technologies for complex materials systems such as PZT, ZnO and AlN, thin film bulk acoustic wave resonator (FBAR) and filter concepts are gaining more and more importance for microwave frequency control applications. For resonators operating in the GHz range, piezoelectric thin film layer in the order of a few microns with desirable electromechanical properties (high Q and wide bandwidth) is required. Among these materials, AlN is very attractive due to that it has a number of interesting properties such as high thermal conductivity, high electrical insulation, and highly chemical stability. These characteristics make it possible to design and fabricate high frequency resonators and bandpass filters for signal processing and communication devices. If the thin film bulk acoustic resonator devices of sufficient performance can be fabricated, they will be the best choice to replace the current crystal, ceramic or SAW devices due to their compactness and good compatibility with the high frequency Si or GaAs integrated circuit processing. In this research, onchip AlN thin film resonator has been investigated. AlN thin films with 0.5 to 2.5μm thickness and c-axis orientation have been deposited by DC magnetron reactive sputtering method on silicon and sapphire substrates. The nanoindentation and laser interferometer methods are used to characterize the mechanical properties and electromechanical properties of the thin AlN film in the composite resonator structure. Patterning of AlN film and electrode layers has also been studied for the fabrication of onchip thin film bulk acoustic wave resonators.

Citation Download Citation

Qingming Chen, Fang Li, and Qing-Ming Wang "Characterization of nanomechanical and piezoelectric properties of AlN thin film for thin film bulk acoustic wave resonators", Proc. SPIE 6223, Micro (MEMS) and Nanotechnologies for Space Applications, 62230I (18 May 2006); https://doi.org/10.1117/12.668203

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Aluminum nitride

Thin films

Resonators

Silicon

Acoustics

Silicon films

Sapphire

Show All Keywords

Keywords/Phrases

Search In:

Publication Years