Characteristics Of Rapidly Grown Thin Oxides

S. Mehta; C. J. Russo; D. Hodul

doi:10.1117/12.961199

26 June 1986 Characteristics Of Rapidly Grown Thin Oxides

S. Mehta, C. J. Russo, D. Hodul

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961199
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Thin oxides with thicknesses in the range of 100 - 350 Å have been grown by rapid thermal oxidation using an ambient gas mixture of oxygen and argon, and pure oxygen. Growth rates as a function of temperature and time have been studied. Silicon samples of both <111> and <100> crystal orientation have been studied. Thickness uniformities for steady state and transient annealing have also been measured.

Citation Download Citation

S. Mehta, C. J. Russo, and D. Hodul "Characteristics Of Rapidly Grown Thin Oxides", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961199

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