The Effects Of Rapid Thermal Annealing On Si-Implanted GaAs

R. N. Legge; W. M. Paulson

doi:10.1117/12.961206

26 June 1986 The Effects Of Rapid Thermal Annealing On Si-Implanted GaAs

R. N. Legge, W. M. Paulson

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961206
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Undoped and Cr-doped LEC GaAs substrates were implanted with Si at 150 keV with doses from 4x10¹² to 1x10¹⁴/cm². The wafers were encapsulated with sputtered Si3Nt1 and annealed in a flash-lamp system at temperatures from 850 to 1025°C for times between 5 and 80 seconds. Channel dose implants into undoped LEC wafers give mobilities between 4700 and 4800 cm²/V-s for 1000°C, 5 sec. anneals, which are comparable with furnace annealed wafers. A sheet resistance of 61 ohms/sq and a mobility of 2500 cm2/V-s was obtained for a 1x10¹⁴/cm² implant dose. Reproducible threshold voltages can be obtained for both undoped and Cr-doped substrates using rapid thermal annealing.

Citation Download Citation

R. N. Legge and W. M. Paulson "The Effects Of Rapid Thermal Annealing On Si-Implanted GaAs", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961206

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