SiO<sub>2</sub> on CNT: molecular dynamics simulation

Vyacheslav V. Barkaline; Vladislav V. Nelayev; Alexander S. Chashinski

doi:10.1117/12.676302

9 June 2006 SiO₂ on CNT: molecular dynamics simulation

Vyacheslav V. Barkaline, Vladislav V. Nelayev, Alexander S. Chashinski

Proceedings Volume 6253, Ninth International Workshop on Nondestructive Testing and Computer Simulations; 625306 (2006) https://doi.org/10.1117/12.676302
Event: Ninth International Workshop on Nondestructive Testing and Computer Simulations, 2005, St. Petersburg, Russian Federation

Abstract

Carbon nanotubes are the basic element of modern nanoelectronic devices. One of the most promising their applications is a carbon nanotube based conducting channel in field-effect transistor with SiO₂ dielectric deposited on the nanotube. Simulation of SiO_x on CNT technology and some properties of that system were studied by means of molecular dynamics method. MM+ interatomic potential was used for calculations.

Citation Download Citation

Vyacheslav V. Barkaline, Vladislav V. Nelayev, and Alexander S. Chashinski "SiO₂ on CNT: molecular dynamics simulation", Proc. SPIE 6253, Ninth International Workshop on Nondestructive Testing and Computer Simulations, 625306 (9 June 2006); https://doi.org/10.1117/12.676302

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