Formation of quantum dots in heterostructures in mixed diffusion conditions

R. D. Vengrenovich; A. V. Moskalyuk; S. V. Yarema

doi:10.1117/12.679935

14 June 2006 Formation of quantum dots in heterostructures in mixed diffusion conditions

R. D. Vengrenovich, A. V. Moskalyuk, S. V. Yarema

Proceedings Volume 6254, Seventh International Conference on Correlation Optics; 625410 (2006) https://doi.org/10.1117/12.679935
Event: Seventh International Conference on Correlation Optics, 2005, Chernivsti, Ukraine

Abstract

The size distribution function of islands at semiconductor heterostructures has been computed within the framework ofthe Ostwald ripening, when island growth is provided by dislocation-surface diffusion. It is shown that, in respect to root-mean square deviations of the computed dependences, the proposed mechanism of island growth corresponds to the series of experimental quantum dot arrays in heterostructure Ge/Si (001).

Citation Download Citation

R. D. Vengrenovich, A. V. Moskalyuk, and S. V. Yarema "Formation of quantum dots in heterostructures in mixed diffusion conditions", Proc. SPIE 6254, Seventh International Conference on Correlation Optics, 625410 (14 June 2006); https://doi.org/10.1117/12.679935

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