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10 June 2006 Electronic transport through silicon nanocrystals embedded in SiO2 matrix
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62600L (2006)
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
The presented work is devoted to investigation of electrical properties of metal-oxide-semiconductor structures containing nanocrystals in silicon dioxide. Nanocrystals were fabricated in the middle of SiO2 layer with use of ion implantation and following thermal treatments at a temperature of ~1000°C. Capacity-voltage (C-V) and current-voltage (I-V) characteristics were measured at room and nitrogen temperatures at various frequencies from 1kHz up to 145kHz. I-V characteristics of MOS-structures with 75nm thick SiO2 layer demonstrated repeatable steps. Position of steps qualitatively corresponds to theoretical one, which were calculated using electron state energies for nanocrystals with size 5 nm. Steps due to Coulomb blockade effect on spin degenerated levels in nanocrystals are resolved in experiment. CV- characteristics displayed sharp frequency dependent peak possibly corresponded to approximately mono-energetic states, which provides transport of electrons through SiOx.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. D. Efremov, S. A. Arzhannikova, G. N. Kamaev, G. A. Kachurin, A. V. Kretinin, V. V. Malutina-Bronskaya, D. V. Marin, V. A. Volodin, and S. G. Cherkova "Electronic transport through silicon nanocrystals embedded in SiO2 matrix", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600L (10 June 2006);

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