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10 June 2006 Use of thermomigration in MEMS technology
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601L (2006) https://doi.org/10.1117/12.683500
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The physical principles of thermomigration process and technical approaches utilizing this process at fabrication various kinds of silicon-based MEMS devices have been presented. The specific examples applied to silicon bulk micromachining, producing of p-n junction isolation and vertical through-wafer interconnects, and monolithic joining of silicon package has been considered. On the above-mentioned subjects, the review contains available information extracted from more than 30 scientific articles and patents.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eduard Yu. Buchin and Yuri I. Denisenko "Use of thermomigration in MEMS technology", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601L (10 June 2006); https://doi.org/10.1117/12.683500
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