Monte Carlo simulation of device structures with one-dimensional electron gas

Vladimir Borzdov; Fadei Komarov; Vadim Galenchik; Dmitry Pozdnyakov; Andrey Borzdov; Oleg Zhevnyak

doi:10.1117/12.683545

10 June 2006 Monte Carlo simulation of device structures with one-dimensional electron gas

Vladimir Borzdov, Fadei Komarov, Vadim Galenchik, Dmitry Pozdnyakov, Andrey Borzdov, Oleg Zhevnyak

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601N (2006) https://doi.org/10.1117/12.683545
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

In this article the results of calculation of electron scattering rates and the drift velocity of these particles in free standing in vacuum GaAs quantum wire, electron scattering rates via polar optical and acoustic phonons in transistor device structure based on GaAs-in-AlAs quantum wire versus gate voltage, the electric current in armchair single-wall carbon nanotube versus strength of electric field applied along the channel and temperature are presented.

Citation Download Citation

Vladimir Borzdov, Fadei Komarov, Vadim Galenchik, Dmitry Pozdnyakov, Andrey Borzdov, and Oleg Zhevnyak "Monte Carlo simulation of device structures with one-dimensional electron gas", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601N (10 June 2006); https://doi.org/10.1117/12.683545

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