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10 June 2006 Nonequilibrium properties of SIS'IS structure under microwave radiation
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Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601W (2006) https://doi.org/10.1117/12.681786
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation
Abstract
The electron and phonon energy distributions arising in small-size metal absorbers of microwave radiation detectors operating at ultralow temperatures have been calculated using the kinetic equation. It is shown that the electron and phonon distributions are nonequilibrium, significantly different from the Fermi and Bose distributions. The form of electronic and phonon nonequilibrium distributions are determined by the ratio of the rates of electron-electron and electron-phonon relaxation and by the ratio of non-equilibrium phonons escape rate from the absorber and a velocity of a phonon - electron relaxation. The influence of the measuring element (superconductor-insulator-normal metal junction) on the absorber is also take into account. The response of such a bolometer is calculated and compared to the experimental data. The recommendations for magnification of the bolometer response in experiment are suggested.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Semyonov, I. A. Devyatov, and M. Yu. Kupriyanov "Nonequilibrium properties of SIS'IS structure under microwave radiation", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601W (10 June 2006); https://doi.org/10.1117/12.681786
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