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15 June 2006 Test setup for DEPMOSFET matrices for XEUS
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The DEPMOSFET (Depleted p-channel MOSFET) is an Active Pixel Sensor (APS) for the XEUS Wide Field Imager (WFI), which is developed and produced by the MPI semiconductor laboratory in Munich (HLL). The current prototype detector consists of a hybrid where a 64 x 64 pixel matrix with 75 μm x 75 μm pixel size each is mounted together with CMOS SWITCHER II ICs for row-selection and a CAMEX 64 ASIC for readout. First measurements for this device have shown the high energy resolution and quantum efficiency as well as the potential for fast readout. For fast timing studies on XEUS an instrument is needed which is able to deal with count rates up to 106 photons s-1 with 10 μs time resolution. At the Institut fuer Astronomie und Astrophysik, we have built a setup to investigate the timing performance of the current prototype detector and to study the capability of the DEPMOSFET detector to handle high count rates. In this paper we present the Data Acquisition System and the future plans for this setup.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Martin, E. Kendziorra, T. Schanz, A. Santangelo, J. Wilms, J. Treis, S. Herrmann, L. Strüder, P. Lechner, P. Fischer, I. Peric, and D. Barret "Test setup for DEPMOSFET matrices for XEUS", Proc. SPIE 6266, Space Telescopes and Instrumentation II: Ultraviolet to Gamma Ray, 62663P (15 June 2006);


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