Development of fully depleted and back-illuminated charge coupled devices for soft x-ray imager onboard the NeXT satellite

Shin-ichiro Takagi; Takeshi Go Tsuru; Tatsuya Inui; Midori Ozawa; Hironori Matsumoto; Katsuji Koyama; Hiroshi Tsunemi; Emi Miyata; Hideki Ozawa; Daisuke Matsuura; Masakuni Tohiguchi; Satoshi Miyazaki; Yukiko Kamata; Kazuhisa Miyaguchi; Masaharu Muramatsu; Hisanori Suzuki

doi:10.1117/12.672657

15 June 2006 Development of fully depleted and back-illuminated charge coupled devices for soft x-ray imager onboard the NeXT satellite

Shin-ichiro Takagi, Takeshi Go Tsuru, Tatsuya Inui, Midori Ozawa, Hironori Matsumoto, Katsuji Koyama, Hiroshi Tsunemi, Emi Miyata, Hideki Ozawa, Daisuke Matsuura, Masakuni Tohiguchi, Satoshi Miyazaki, Yukiko Kamata, Kazuhisa Miyaguchi, Masaharu Muramatsu, Hisanori Suzuki

Author Affiliations +

Proceedings Volume 6266, Space Telescopes and Instrumentation II: Ultraviolet to Gamma Ray; 62663V (2006) https://doi.org/10.1117/12.672657
Event: SPIE Astronomical Telescopes + Instrumentation, 2006, Orlando, Florida , United States

Abstract

The NeXT (New X-ray Telescope) satellite to be launched around 2010, has a large effective area in the 0.1-80 keV band with the use of the multilayer super mirror (HXT). As one of the focal plane detectors for NeXT, we have been developing the Soft X-ray Imager (SXI). SXI consists of charge coupled devices (CCDs). In order to increase the quantum efficiency (Q.E.) as high as possible, i.e., to detect X-rays collected by HXT as many as possible, we developed a "fully-depleted and back-illuminated CCD" in the attempt to improve the Q.E. of soft X-rays by the back-illuminated structure and that of hard X-rays by thickening of a depletion layer. Thanks to a high-resistivity (over 10kΩ•cm) n-type Si, we have successfully developed Pch CCDs with very thick depletion layer of over 300 micron, which is 4 times thicker than that of established X-ray MOS CCDs (for example XIS, EPIC-MOS and ACIS-I). Furthermore, we have already confirmed we can thin a wafer down to 150 micron independent of its resistivity from the experience of the development of the back supportless CCD. Based on these successful results, we fabricated a test device of "fully depleted and back-illuminated CCD" with the high resistivity (10kOhm cm) N-type Si thinned down to 200 micron. The pixel number and size are 512 x 512 and 24 x 24 μm, respectively. For optical blocking, we coated the surface with Al. We evaluated this test device and confirmed the thickness of depletion layer reaches 200 micron as we expected. In this paper, we present progress in development of these devices for SXI.

Citation Download Citation

Shin-ichiro Takagi, Takeshi Go Tsuru, Tatsuya Inui, Midori Ozawa, Hironori Matsumoto, Katsuji Koyama, Hiroshi Tsunemi, Emi Miyata, Hideki Ozawa, Daisuke Matsuura, Masakuni Tohiguchi, Satoshi Miyazaki, Yukiko Kamata, Kazuhisa Miyaguchi, Masaharu Muramatsu, and Hisanori Suzuki "Development of fully depleted and back-illuminated charge coupled devices for soft x-ray imager onboard the NeXT satellite", Proc. SPIE 6266, Space Telescopes and Instrumentation II: Ultraviolet to Gamma Ray, 62663V (15 June 2006); https://doi.org/10.1117/12.672657

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available