Paper
6 July 2006 Semiconductor fabrication techniques for producing an ultra-flat reflective slit
Thomas E. Vandervelde, Michael J. Cabral, John Wilson, Michael Skrutskie
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Abstract
The most difficult aspects in manufacturing a reflective slit substrate are achieving a precisely fabricated slit surrounded by an optically flat surface. A commonly used technique is to polish a metal substrate that has a slit cut by electric discharge machine (EDM) methods. This process can produce 'optically flat' surfaces; however, the EDM can produce a slit with edge roughness on the order of 10 microns and a RMS field roughness of ~1 micron. Here, we present a departure from these traditional methods and employ the advantages inherent in integrated circuit fabrication. By starting with a silicon wafer, we begin with a nearly atomically flat surface. In addition, the fabrication tools and methodologies employed are traditionally used for high precision applications: this allows for the placement and definition of the slit with high accuracy. If greater accuracy in slit definition is required, additional tools, such as a focused ion beam, are used to define the slit edge down to tens of nanometers. The deposition of gold, after that of a suitable bonding layer, in an ultra-high vacuum chamber creates a final surface without the need of polishing. Typical results yield a surface RMS-roughness of approximately 2nm. Most of the techniques and tools required for this process are commonly available at research universities and the cost to manufacture said mirrors is a small fraction of the purchase price of the traditional ones.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas E. Vandervelde, Michael J. Cabral, John Wilson, and Michael Skrutskie "Semiconductor fabrication techniques for producing an ultra-flat reflective slit", Proc. SPIE 6273, Optomechanical Technologies for Astronomy, 62731Z (6 July 2006); https://doi.org/10.1117/12.672369
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KEYWORDS
Semiconducting wafers

Etching

Silicon

Mirrors

Photomasks

Anisotropic etching

Photoresist materials

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