Paper
15 June 2006 Study of silicon thickness optimization for LSST
Author Affiliations +
Abstract
Sensors for the LSST camera require high quantum efficiency (QE) extending into the near-infrared. A relatively large thickness of silicon is needed to achieve this extended red response. However, thick sensors degrade the point spread function (PSF) due to diffusion and to the divergence of the fast f/1.25 beam. In this study we examine the tradeoff of QE and PSF as a function of thickness, wavelength, temperature, and applied electric field for fully-depleted sensors. In addition we show that for weakly absorbed long-wavelength light, optimum focus is achieved when the beam waist is positioned slightly inside the silicon.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. O'Connor, V. Radeka, D. Figer, J. G. Geary, D. K. Gilmore, J. Oliver, C. W. Stubbs, P. Z. Takacs, and J. A. Tyson "Study of silicon thickness optimization for LSST", Proc. SPIE 6276, High Energy, Optical, and Infrared Detectors for Astronomy II, 62761W (15 June 2006); https://doi.org/10.1117/12.673393
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Cited by 12 scholarly publications.
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KEYWORDS
Sensors

Point spread functions

Large Synoptic Survey Telescope

Silicon

Quantum efficiency

Diffusion

Absorption

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