Paper
21 June 2006 Characterizing the response of an EUV reticle during electrostatic chucking
Author Affiliations +
Proceedings Volume 6281, 22nd European Mask and Lithography Conference; 628107 (2006) https://doi.org/10.1117/12.692727
Event: 22nd European Mask and Lithography Conference, 2006, Dresden, Germany
Abstract
Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for Next-Generation Lithography in the sub-45-nm regime. One of the key components in the development of EUVL is understanding and characterizing the response of the mask when it is electrostatically chucked in the exposure tool. In this study, finite element (FE) models have been developed to simulate the reticle / chuck system under typical exposure conditions. FE simulations are used to illustrate (a) the effects of the nonflatness of the reticle and chuck, (b) the image placement errors induced by back-side particulates, (c) the influence of the coefficient of friction between the reticle and chuck during exposure scanning, and (d) the effects of contact conductance on the thermomechanical response of the reticle. The focus of this paper is to illustrate that mechanical modeling and simulation has now become a fundamental tool in the design of electrostatic pin chucks for the EUVL technology.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roxann L. Engelstad, Edward G. Lovell, Andrew R. Mikkelson, Madhura Nataraju, Vasu Ramaswamy, Jaewoong Sohn, Gerald A. Dicks, Amr Y. Abdo, and Richard O. Tejeda "Characterizing the response of an EUV reticle during electrostatic chucking", Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 628107 (21 June 2006); https://doi.org/10.1117/12.692727
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Cited by 2 scholarly publications.
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KEYWORDS
Reticles

Particles

Extreme ultraviolet lithography

Photomasks

Extreme ultraviolet

Data modeling

Zerodur

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