Rigorous mask modeling beyond the Hopkins approach

J. Schermer; P. Evanschitzky; A. Erdmann

doi:10.1117/12.692730

21 June 2006 Rigorous mask modeling beyond the Hopkins approach

J. Schermer, P. Evanschitzky, A. Erdmann

Proceedings Volume 6281, 22nd European Mask and Lithography Conference; 62810A (2006) https://doi.org/10.1117/12.692730
Event: 22nd European Mask and Lithography Conference, 2006, Dresden, Germany

Abstract

This paper demonstrates the implementation of an imaging algorithm that extends the Hopkins approach in order to cope with the demanding requirements of state of the art lithography. Rigorous mask simulation for oblique angles of incidence is integrated into our model of a lithographic projection system. In order to show the capabilites, Chromeless Phase Lithography (CPL) masks are studied with the new implementation. Immersion conditions are applied and a benchmark against the Hopkins approximation is carried out. An impact on aerial-image formation and on lithographic-process simulation is shown. The approach helps to consider off-axis illumination-effects in mask optimization.

Citation Download Citation

J. Schermer, P. Evanschitzky, and A. Erdmann "Rigorous mask modeling beyond the Hopkins approach", Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810A (21 June 2006); https://doi.org/10.1117/12.692730

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