Mask absorber material dependence of 2D OPC in ArF high NA lithography

Wen-Hao Cheng; Jeff Farnsworth

doi:10.1117/12.692807

21 June 2006 Mask absorber material dependence of 2D OPC in ArF high NA lithography

Wen-Hao Cheng, Jeff Farnsworth

Proceedings Volume 6281, 22nd European Mask and Lithography Conference; 62810V (2006) https://doi.org/10.1117/12.692807
Event: 22nd European Mask and Lithography Conference, 2006, Dresden, Germany

Abstract

Rigorous optical proximity correction (OPC) for 3D reticle effects is critical to the success of 193nm wavelength immersion lithography implementation. The impact of 2D and 3D mask polarization and shadowing effects to 2D imaging in ultra high Numerical Aperture (NA) low-k1 imaging is assessed by simulation. An end-to-end (ETE) dense line 2D feature of various embedded (attenuated) phase shift mask (ePSM) with various material of film stack is studied. Line-end pullback is shown correlated with mask shadowing under TE-polarized OAI. Polarized OAI phase calibrated thinner mask absorber provides less shadowing, better 2D imaging window, and enables further scaling of mask feature patterning.

Citation Download Citation

Wen-Hao Cheng and Jeff Farnsworth "Mask absorber material dependence of 2D OPC in ArF high NA lithography", Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810V (21 June 2006); https://doi.org/10.1117/12.692807

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