Paper
22 June 2006 Influence of Al doping on the phase change kinetics of eutectic Sb70Te30 recording film
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Proceedings Volume 6282, Optical Data Storage 2006; 62821Z (2006) https://doi.org/10.1117/12.685190
Event: Optical Data Storage 2006, 2006, Montréal, Canada
Abstract
The addition of Al increases the temperature and activation energy of crystallization of the fast-growth type Sb70Te30 recording film so that the archival stability will be improved. Meanwhile, the addition of Al increases the temperature and activation energy of melting of the Sb70Te30 recording film so that the local melting of the crystalline Sb and Sb2Te3 phases will be suppressed. The pulsed laser powers required to trigger crystallization, melting, and ablation of Sb70Te30 recording film increase with increasing Al content indicating the increased stability of the non-crystalline phase, in the meantime, the increased melting and ablation powers indicating the Al addition could increase the melting temperature and prevent ablation effect of the Sb70Te30 recording film.
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Yung-Sung Hsu, Yung-Chiun Her, Shun-Te Cheng, and Song-Yeu Tsai "Influence of Al doping on the phase change kinetics of eutectic Sb70Te30 recording film", Proc. SPIE 6282, Optical Data Storage 2006, 62821Z (22 June 2006); https://doi.org/10.1117/12.685190
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KEYWORDS
Antimony

Tellurium

Crystals

Aluminum

Reflectivity

Laser ablation

Laser crystals

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