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19 May 2006 Mask repair technique assessment and development for the 45nm lithographic node
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628311 (2006) https://doi.org/10.1117/12.681862
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
The efficacy of currently available repair techniques has been assessed for a wide variety of defect types encountered on advanced lithographic masks. Focused ion beam (FIB) with gas-assisted etching and deposition, electron beam induced chemical processing (EBIC), and atomic force microscope based nano-machining (RAVE) were among the different methodologies evaluated. Various types of optical phase-shifting masks for the 45nm lithographic node, as well as nano-imprint lithography (NIL) templates, were used as test vehicles. Defect imaging resolution, spatial process confinement, repair edge placement, end-pointing control, sample damage (undesired changes in topographic or optical properties), and future extendibility served as the primary metrics for gauging repair performance. The primary aim of this study was to provide a single "snapshot" in time of the current development status of each tool for the context of 45nm node mask repair specifications and by no means were there any expectations for a final solution to already be commercially available. However, the results obtained from these tests should provide useful feedback and information to help improve the learning cycle for the development of 45nm lithographic node mask repair systems.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Marchman, D. Taylor, S. Hadisutjipto, S. Mackay, R. Cottle, J. Maltabes, and J. Brown "Mask repair technique assessment and development for the 45nm lithographic node", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628311 (19 May 2006); https://doi.org/10.1117/12.681862
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