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19 May 2006 Study of mask induced polarization effects on att.PSM in immersion lithography
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831E (2006) https://doi.org/10.1117/12.681878
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
The immersion lithography for 45 nm generation has been developing aggressively for smaller critical dimension of semiconductor devices. The polarization lithography system is indispensable to have an advantage to use the immersion lithography with hyper NA (>1.0). As pattern size becomes smaller, mask induced polarization effects to polarization of exposure image seems not to be negligible. There are several issues about mask induced polarization. But dominant factor for mask induced polarization effect is not understood well. In this paper, in case of monolayer mask of att.PSM, degree of polarization (DoP) strongly depends on film thickness and extinction coefficient from simulation and experimental results. DoP depends on material factor. And in case of double layer mask, DoP depends on total film thickness and extinction coefficient of both upper layer and bottom layer. So, DoP depends also on structure of mask.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Mizoguchi, Yousuke Kojima, Mikio Takagi, Tadashi Saga, Takashi Haraguchi, Toshio Konishi, Yuuichi Fukushima, Tsuyoshi Tanaka, and Yoshimitsu Okuda "Study of mask induced polarization effects on att.PSM in immersion lithography", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831E (19 May 2006); https://doi.org/10.1117/12.681878
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