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20 May 2006 Photomask dry-etching techniques for hard mask
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831T (2006) https://doi.org/10.1117/12.681756
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
Abstract
A photomask dry etch process typically uses chlorine and oxygen plasma for chrome etching with resist masking. This gas mixture leads macro- and micro-loading as different pattern density with mask-to-mask and within a mask. Thus, there have been several approaches to reduce chrome etch loading by changing etch chemistry, etch conditions and mask materials. Using hard mask material on the chrome layer can minimize chrome etch loading and reduce chrome etch bias. In this paper, chrome etch characteristics which use hard mask materials is investigated.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sung-Won Kwon, Young-Ju Park, Sung-Yoon Kim, Han-shin Lee, Hyuk-Joo Kwon, Seung-Woon Choi, and Woo-Sung Han "Photomask dry-etching techniques for hard mask", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831T (20 May 2006); https://doi.org/10.1117/12.681756
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