Quartz etch challenges for 45 nm phase-shift masks

Scott A. Anderson; Madhavi Chandrachood; Michael Grimbergen; Toi Yue Becky Leung; Ibrahim M. Ibrahim; Sheeba Panayil; Ajay Kumar

doi:10.1117/12.681761

20 May 2006 Quartz etch challenges for 45 nm phase-shift masks

Scott A. Anderson, Madhavi Chandrachood, Michael Grimbergen, Toi Yue Becky Leung, Ibrahim M. Ibrahim, Sheeba Panayil, Ajay Kumar

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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831X (2006) https://doi.org/10.1117/12.681761
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

One means of extending the limits and lifetime of current lithography platforms for 45nm and beyond is the development of resolution enhancement techniques (RET) in the form of optical phase-shifting masks (PSM). By employing optical interference from 180° shifted lithography emission, PSM masks are able to enhance feature resolution at the wafer. This is particularly important for sub-wavelength features (i.e., features with critical dimensions less than the lithography wavelength) where line resolution can be severely degraded without such techniques. For these PSMs, the challenge is to provide highly uniform quartz etch performance across the entire active area of the mask for various feature sizes and local loads. Micro-loading (a.k.a. RIE lag or reactive ion etch lag) and phase angle range are key performance parameters to control. As the demands for these parameters tighten and mask costs rise, strict performance control is required for all PSM mask varieties utilized in the mask shop. In this paper we will discuss process improvements for the Applied Materials Tetra II^TM chromeless phase lithography (CPL) etch application. In particular, the discussion will focus on recent process improvements in phase uniformity and RIE lag for our chrome hard mask CPL etch process. Results from modifications to the etch process are presented. Feature profiles are also discussed with examples showing near vertical sidewalls and no micro-trenching.

Citation Download Citation

Scott A. Anderson, Madhavi Chandrachood, Michael Grimbergen, Toi Yue Becky Leung, Ibrahim M. Ibrahim, Sheeba Panayil, and Ajay Kumar "Quartz etch challenges for 45 nm phase-shift masks", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831X (20 May 2006); https://doi.org/10.1117/12.681761

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KEYWORDS

Etching

Photomasks

Reactive ion etching

Quartz

Lithography

Ions

Resolution enhancement technologies

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