Paper
20 May 2006 Dissolution behavior of chemically amplified resist for advanced mask- and NIL mold-making as studied by dissolution rate monitor
Kazumasa Takeshi, Kazuto Oono, Yoshiyuki Negishi, Daisuke Inokuchi, Keishi Tanaka, Akira Tamura
Author Affiliations +
Abstract
The dissolution behaviors of chemically amplified resists for electron beam lithography (EB CARs) have been investigated using the technique of quartz crystal microbalance (QCM) method. We report the first direct measurement of the dissolution rate of EB CARs and the comparison with CAR of using KrF exposure in wafer fabrication. The EB CAR for nano-imprint lithography mold making was also evaluated by this technique, and then resolved 50 nm line and space patterns using conventional 50 KV variable shape beam writing system. The understanding of dissolution kinetics of EB CARs is capable of designing high performance resists in near future.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazumasa Takeshi, Kazuto Oono, Yoshiyuki Negishi, Daisuke Inokuchi, Keishi Tanaka, and Akira Tamura "Dissolution behavior of chemically amplified resist for advanced mask- and NIL mold-making as studied by dissolution rate monitor", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831Z (20 May 2006); https://doi.org/10.1117/12.681763
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Nanoimprint lithography

Polymers

Semiconducting wafers

Chemically amplified resists

Lithography

Vestigial sideband modulation

Photoresist processing

Back to Top