New proximity effect correction for under 100 nm patterns

Masahiro Shoji; Nobuyasu Horiuchi; Tomoyuki Chikanaga; Takashi Niinuma; Dai Tsunoda

doi:10.1117/12.681796

20 May 2006 New proximity effect correction for under 100 nm patterns

Masahiro Shoji, Nobuyasu Horiuchi, Tomoyuki Chikanaga, Takashi Niinuma, Dai Tsunoda

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62832L (2006) https://doi.org/10.1117/12.681796
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

As pattern size becomes very small, it has been getting difficult to correct an EB proximity effect accurately. We have developed a new proximity effect correction which corrects dose by simulating the energy scattering. It can correct accurately in reasonable computing time. We will explain how to improve efficiency of energy deposit simulation and evaluate the algorithm in this paper.

Citation Download Citation

Masahiro Shoji, Nobuyasu Horiuchi, Tomoyuki Chikanaga, Takashi Niinuma, and Dai Tsunoda "New proximity effect correction for under 100 nm patterns", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62832L (20 May 2006); https://doi.org/10.1117/12.681796

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available