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20 May 2006 The study of contact hole for 65nm node with KrF
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Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 628336 (2006)
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan
The contact hole patterning has been huge challenge in the photolithography since sub-100nm node device. There are many difficulties for NA (Numerical Aperture) and illumination optimization, especially since dense and sparse contact holes are mixed in the same mask. The high NA and OAI (Off Axis Illumination) have strong improvements for pattern fidelity and process margin in case of dense contact holes but DoF (Depth of Focus) margin is a problem for sparse patterns. The lithography engineers have two ways to overcome these contact holes patterning problems. The one is using the resist techniques such as resist thermal flow, SAFIER (Shrink Assist Techniques for Enhanced Resolution), RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink) and the other is optimizing illumination and mask layout such as SRAF (Sub Resolution Assist Feature), OAI and PSM (Phase Shift Mask), double exposure. This paper will discuss contact hole patterning results using a combination OAI and SRAF with KrF.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tae-Jun You, Sung-Woo Ko, James Moon, Yeong-Bae Ahn, Byung-Ho Nam, and Dong-Gyu Yim "The study of contact hole for 65nm node with KrF", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628336 (20 May 2006);

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