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7 September 2006 Modeling and characterization of GaN p-i-n photodiodes
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Abstract
This paper reports temperature-dependent DC and small-signal RF characteristics of a 0.4-mm-radius sapphire-based GaN p-i-n diode between -60°C and 175°C. Deep levels approximately 1 eV below the conduction band were observed in both persistent photo-conductance and photo-capacitance measurements. Self-heating effects were also observed and modeled with the measured thermal resistance and time constant. Based on these characteristics, an equivalent-circuit model was constructed, which accurately predicted the temperature-dependent DC and RF characteristics of the diode.
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Jie Deng, Subrata Halder, James C. M. Hwang, Brian Hertog, Junqing Xie, Amir Dabiran, and Andrei Osinsky "Modeling and characterization of GaN p-i-n photodiodes", Proc. SPIE 6294, Infrared and Photoelectronic Imagers and Detector Devices II, 62940N (7 September 2006); https://doi.org/10.1117/12.682087
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