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9 July 1986 To Layer Resist For Plasma Etching
H. H. Wang, E. Lin
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Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963656
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States
Abstract
A capped photoresist mask of Kodak 809 on PN with minimal undercut is developed. The advantage of leaving Kodak 809 cap is that it offers better erosion resistance in the chlorine-containing plasma. The undercut of PMMA is dependent on the incidence angle of ultraviolet light to the resist. A wide incident angle creates substantial undercut while a normal incidence produces very slight undercut.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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H. H. Wang and E. Lin "To Layer Resist For Plasma Etching", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963656
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