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9 July 1986 To Layer Resist For Plasma Etching
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Abstract
A capped photoresist mask of Kodak 809 on PN with minimal undercut is developed. The advantage of leaving Kodak 809 cap is that it offers better erosion resistance in the chlorine-containing plasma. The undercut of PMMA is dependent on the incidence angle of ultraviolet light to the resist. A wide incident angle creates substantial undercut while a normal incidence produces very slight undercut.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. H. Wang and E. Lin "To Layer Resist For Plasma Etching", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963656
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