Design and analysis of PBG structure for achieving SOI buffer

Mei-Hsiu Pan; Chia-Chin Chiang; Shyh-Lin Tsao

doi:10.1117/12.678675

8 September 2006 Design and analysis of PBG structure for achieving SOI buffer

Mei-Hsiu Pan, Chia-Chin Chiang, Shyh-Lin Tsao

Proceedings Volume 6310, Photonic Devices and Algorithms for Computing VIII; 63100K (2006) https://doi.org/10.1117/12.678675
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

Single mode SOI waveguide devices with low propagation loss and low insertion loss have been demonstrated at wavelength λ=1.3μm and 1.55μm, respectively. The wavelength resonator devices have many applications in optical communications including wavelength filtering, routing, switching, modulating, multiplexing, optic buffer, and demultiplexing. We use the free carrier plasma dispersion effect to design the switch of SOI buffer and Photonic crystal Bandgap (PBG) waveguide buffer devices are simulated by Finite Difference Time Domain (FDTD) methods. The technology have made it possible to create micrometer-size photonics devices based on reasonably low-loss semiconductor waveguides. To characterize SOI buffer waveguides delays, the analysis of wavelength response, the number of propagation modes and the waveguide loss are investigated at wavelength 1.55μm.

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Mei-Hsiu Pan, Chia-Chin Chiang, and Shyh-Lin Tsao "Design and analysis of PBG structure for achieving SOI buffer", Proc. SPIE 6310, Photonic Devices and Algorithms for Computing VIII, 63100K (8 September 2006); https://doi.org/10.1117/12.678675

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KEYWORDS

Resonators

Waveguides

Refractive index

Silicon

Modulation

Dispersion

Finite-difference time-domain method

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