Paper
30 June 1986 Influence Of Sputter Effects On The Resolution In X-Ray Mask Repair
H. Betz, A. Heuberger, N. P. Economou, D . C. Shaver
Author Affiliations +
Abstract
When Focused-Ion-Beam Milling is used for repairing opaque defects on X-ray masks, the specific sputter effects such as redeposition of the sputtered material and reflection of the primary ions influence the obtained resolution appreciably. This physical behaviour leads to edge angles 4 90° and to a shift of the milled pattern as well as to a specific kind of 'proximity effect'. That means, the repair of a defect could generate new defects due to the redeposited material which have to be corrected again. Furthermore, the achievable aspect ratio which depends on the sputter yield is limited to approximately 5 for gold under practical conditions.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Betz, A. Heuberger, N. P. Economou, and D . C. Shaver "Influence Of Sputter Effects On The Resolution In X-Ray Mask Repair", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963670
Lens.org Logo
CITATIONS
Cited by 7 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Ions

Gold

Photomasks

Ion beams

X-rays

Opacity

Gallium

RELATED CONTENT

X-ray zone plate fabrication using a focused ion beam
Proceedings of SPIE (January 05 2001)
X-ray mask defect repair optimization
Proceedings of SPIE (June 25 1999)
Defect Repair Techniques For X-Ray Masks
Proceedings of SPIE (June 18 1984)
State of the art in focused ion beam mask repair...
Proceedings of SPIE (July 03 1995)
0.25-um x-ray mask repair with focused ion beams
Proceedings of SPIE (June 24 1993)

Back to Top