Recent Progress On Submicron Electron Beam Lithography

Tadahiro Takigawa; Kuniya Shimazaki; Naoki Kusui

doi:10.1117/12.963682

30 June 1986 Recent Progress On Submicron Electron Beam Lithography

Tadahiro Takigawa, Kuniya Shimazaki, Naoki Kusui

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963682
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

In order to fabricate submicron pattern, total electron beam (EB) lithography system has been developed. Upper submicron pattern will be realized by optical lithography, which requires reticle with high accuracy. An EB writing system, EBM-130/40, has the performance of drawing capability of 4 M bit DRAM reticle pattern in about 40 minutes. The EB system incorporated with peripheral technologies including data compaction conversion software, reticle inspection system, APC-130R, and EBR-9 resist process can produce advanced reticles of number of about 600 per month. For lower submicron pattern formation, next generation lithography system is required. The EBM-130V is the variable shaped EB system with high acceleration voltage of 50 kV and high dosage of 50 μC/cm² for direct writing and X-ray mask fabrication for development of the high bit density VLSI pattern. This system makes possible EB/optical combined lithography. Its metrology function allows it to measure X-ray mask distortion.

Citation Download Citation

Tadahiro Takigawa, Kuniya Shimazaki, and Naoki Kusui "Recent Progress On Submicron Electron Beam Lithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963682

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