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14 September 2006 High-performance transparent flexible inorganic-organic hybrid thin-film transistors fabricated at room temperature using n-type In2O3 semiconducting films
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Abstract
High-performance inorganic-organic hybrid thin-film transistors (TFTs) are fabricated using semiconducting In2O3 thin-film deposited at room-temperature by ion-assisted deposition and thin organic dielectrics grown at near-room temperature. These hybrid TFTs combine the advantages of a high-mobility inorganic semiconductor with high-capacitance organic gate dielectrics. In2O3 thin-films exhibit high optical transparency in the visible region, a wide band gap, and smooth morphologies. Furthermore, the present In2O3 films are compatible with both inorganic dielectrics and nanoscopic high-capacitance/low-leakage organic dielectrics. The resulting transparent flexible TFTs exhibit near-1.0V operating characteristics with a very large field-effect mobility of > 100 cm2/V•s, and a near-zero threshold voltage. The high performance exhibits a significant improvement over previous organic and metal-oxide-based TFTs, and even rivals that of poly-Si TFTs. In addition, these TFTs exhibit great light- and air-stability when exposed to ambient.
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Lian Wang and Tobin J. Marks "High-performance transparent flexible inorganic-organic hybrid thin-film transistors fabricated at room temperature using n-type In2O3 semiconducting films", Proc. SPIE 6321, Nanophotonic Materials III, 63210A (14 September 2006); https://doi.org/10.1117/12.681442
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