Aluminum Taper Etching Using Resist/a-Si/Al Structure

Hiroshi Hoga; Masayoshi Kanaya; Sadao Suganuma

doi:10.1117/12.963719

20 August 1986 Aluminum Taper Etching Using Resist/a-Si/Al Structure

Hiroshi Hoga, Masayoshi Kanaya, Sadao Suganuma

Proceedings Volume 0633, Optical Microlithography V; (1986) https://doi.org/10.1117/12.963719
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Aluminum taper etching has been developed to improve dielectric step coverage. The seventy degree tapered aluminum pattern is obtained on a flat topography by erosion of a sloped resist mask and high etching anisotropy in RIE. To improve process stability and controllability, resist/a-Si(amorphous silicon)/Al structure was adopted. Amorphous silicon decreases the reflectivity to reduce pattern degradation and has lower etching rate to serve as a secondary etching mask. A simple etching model was proposed to evaluate taper etching controllability and limitation. SEM observations and TEG evaluations show a good dielectric step coverage on tapered aluminum pattern.

Citation Download Citation

Hiroshi Hoga, Masayoshi Kanaya, and Sadao Suganuma "Aluminum Taper Etching Using Resist/a-Si/Al Structure", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); https://doi.org/10.1117/12.963719

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