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5 December 2006 Using N-type organic material with photoconductivity for low-reflectance OLEDs
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Abstract
In this paper, we have demonstrated a low-reflectance organic light-emitting device (OLED) by inserting a perylene diimide derivative between the emitting layer (EML) and the cathode. Such a material exhibits a good electron transport capability and good photoconductivity which absorbs light. A semi-transparent layer composed of thin aluminum (Al) and silver (Ag) was used between the EML and the n-type organic material, a perylene diimide derivative, for better electron injection and efficient destructive interference. The J-V characteristics of our low reflection and the control one are nearly identical which shows the superior conductivity of this material. In addition, the absorption peak of this ntype organic material is near 550 nm which can eliminate most of the ambient visible light. And the potocurrent is generated from self-absorption by this material. Thus, this device can also be applied as a photodetector or the applications of the self-adjustable display under different ambient illumination with suitable driving scheme.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kai-Hsiang Chuang, Yu-Hsuan Ho, Jiun-Haw Lee, Chun-Chieh Chao, Man-Kit Leung, Cheng-Yu Li, and Hsuen-Li Chen "Using N-type organic material with photoconductivity for low-reflectance OLEDs", Proc. SPIE 6333, Organic Light Emitting Materials and Devices X, 63331Q (5 December 2006); https://doi.org/10.1117/12.682698
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