Paper
15 November 2006 Exciton annihilation and diffusion in semiconducting polymers
P. E. Shaw, A. J. Lewis, A. Ruseckas, I. D. W. Samuel
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Abstract
We show that time-resolved luminescence measurements at high excitation densities can be used to study exciton annihilation and diffusion, and report the results of such measurements on films of P3HT and MEH-PPV. The results fit to an exciton-exciton annihilation model with a time independent annihilation rate γ, which was measured to be γ = (2.8±0.5)×10-8 cm3s-1 in MEH-PPV and γ = (5.2±1)×10-10 cm3s-1 in P3HT. This implies much faster diffusion in MEHPPV. Assuming a value of 1 nm for the annihilation radius we evaluated the diffusion length for pristine P3HT in one direction to be 3.2 nm. Annealing of P3HT was found to increase the annihilation rate to (1.1±0.2)×10-9 cm3s-1 and the diffusion length to 4.7 nm.
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P. E. Shaw, A. J. Lewis, A. Ruseckas, and I. D. W. Samuel "Exciton annihilation and diffusion in semiconducting polymers", Proc. SPIE 6334, Organic Photovoltaics VII, 63340G (15 November 2006); https://doi.org/10.1117/12.681573
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Cited by 9 scholarly publications.
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KEYWORDS
Diffusion

Excitons

Polymers

Absorbance

Annealing

Picosecond phenomena

Luminescence

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