Modified structures of multicrystalline silicon as light detectors

Barbara Swatowska; Tomasz Stapinski; Z. Sobkow

doi:10.1117/12.721039

20 October 2006 Modified structures of multicrystalline silicon as light detectors

Barbara Swatowska, Tomasz Stapinski, Z. Sobkow

Proceedings Volume 6348, Optoelectronic and Electronic Sensors VI; 634807 (2006) https://doi.org/10.1117/12.721039
Event: Optoelectronic and Electronic Sensors VI, 2006, Zakopane, Poland

Abstract

Photovoltaic structures of multicrystalline silicon were modified by the deposition of a-Si:C:H thin films. The films have been deposited by Plasma Enhanced Chemical Vapor Deposition at 13.56 MHz in SiH₄ +CH₄ gaseous mixtures. The structures have been investigated by means of optical and electrical methods. Spectral photosensitivity measurements were done at room temperature in voltage and current modes. The signal was registered in the function of light in the visible and near infrared region from 400 to 1100 nm. Silicon structures covered by a-Si:C:H have higher spectral photosensitivities than uncover ones and the apparent increase in efficiency has been observed.

Citation Download Citation

Barbara Swatowska, Tomasz Stapinski, and Z. Sobkow "Modified structures of multicrystalline silicon as light detectors", Proc. SPIE 6348, Optoelectronic and Electronic Sensors VI, 634807 (20 October 2006); https://doi.org/10.1117/12.721039

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