Magnetic tunnel junctions and their applications

Tomasz Stobiecki

doi:10.1117/12.721113

20 October 2006 Magnetic tunnel junctions and their applications

Tomasz Stobiecki

Proceedings Volume 6348, Optoelectronic and Electronic Sensors VI; 63480S (2006) https://doi.org/10.1117/12.721113
Event: Optoelectronic and Electronic Sensors VI, 2006, Zakopane, Poland

Abstract

Magnetic tunnel junction (MTJ) consists of at least two ferromagnetic layers, separated by an insulating tunnel barrier of amorphous aluminum oxide Al-O or monocrystalline (100)MgO. The magnetization direction of the free ferromagnetic layer (top electrode) is used for information storage. The tunnel resistance of the memory bit cell is either low or high, depending on the relative orientation of magnetizations (parallel or antiparallel) of the free layer with respect to the fixed layer (bottom electrode). The sense current flows perpendicular to the film plane of MTJ for the random access memory (MRAM) cell or reprogrammable magnetic logic (RML) system. The MRAM or RML bit cell is programmed by the magnetic field, generated by current flowing through conductors.

Citation Download Citation

Tomasz Stobiecki "Magnetic tunnel junctions and their applications", Proc. SPIE 6348, Optoelectronic and Electronic Sensors VI, 63480S (20 October 2006); https://doi.org/10.1117/12.721113

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