Application of Dosemapper for 65-nm gate CD control: strategies and results

Nazneen Jeewakhan; Nader Shamma; Sang-Jun Choi; Roque Alvarez; D. H. Son; Makoto Nakamura; Vinny Pici; Jim Schreiber; Wei-shun Tzeng; Sean Ang; Daniel Park

doi:10.1117/12.692938

20 October 2006 Application of Dosemapper for 65-nm gate CD control: strategies and results

Nazneen Jeewakhan, Nader Shamma, Sang-Jun Choi, Roque Alvarez, D. H. Son, Makoto Nakamura, Vinny Pici, Jim Schreiber, Wei-shun Tzeng, Sean Ang, Daniel Park

Author Affiliations +

Proceedings Volume 6349, Photomask Technology 2006; 63490G (2006) https://doi.org/10.1117/12.692938
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

Aggressive line width control requirements for leading edge IC fabrication necessitate integration of novel techniques such as DoseMapper into the lithography process flow. DoseMapper is based on the simple concept that CD uniformity (CDU) can be improved through compensation of CD errors by using the scanner actuators. Specifically, the DoseMapper system allows for compensation of interfield and intrafield CD non-uniformity, based on the spatial distribution of in-line CD measurements or end-of-line electrical parameters for a stable process. This approach is supported by the fact that small variations of linewidth are correlated to exposure dose in a linear fashion. In this work we describe strategies for and results of the application of DoseMapper in a lithographic process for gate layer in a 65nm technology. We will highlight the potential strengths and weaknesses of various DoseMapper strategies to. For instance, we have learned that dose adjustments which are based on post-etch CD signature can lead to degradation of the lithography-based process window especially for 2 -dimensional features due to high MEEF. Therefore, it is asserted that application of DoseMapper in a high-volume manufacturing process requires consideration of such rational tradeoffs as mentioned above. Impact of Mask CD variation on DoseMapper effectiveness will also be discussed. This has the potential to have a significant impact on manufacturability of photo masks for the 65nm node and beyond

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Nazneen Jeewakhan, Nader Shamma, Sang-Jun Choi, Roque Alvarez, D. H. Son, Makoto Nakamura, Vinny Pici, Jim Schreiber, Wei-shun Tzeng, Sean Ang, and Daniel Park "Application of Dosemapper for 65-nm gate CD control: strategies and results", Proc. SPIE 6349, Photomask Technology 2006, 63490G (20 October 2006); https://doi.org/10.1117/12.692938

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