Paper
20 October 2006 Optical properties of alternating phase-shifting masks
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Abstract
The 2005 edition of the International Technology Roadmap for Semiconductors specifies that phase errors of alternating phase-shifting masks (APSM) should approach ± 1 degree by 2008. This specification is reasonably motivated by the desire to keep imaging effects of mask errors below those of aberrations of projection optics, but it implies a questionable assumption that the phase of a feature is a well-defined quantity. Variations of both phase and amplitude across apertures are significant. In addition to the variables that we expect mask manufacturers to control, such as trench depth, wall slope, and bottom-surface flatness, phase also depends on polarization, illumination angle, widths of apertures, and proximity of other features. Dependence of phase on variables in addition to trench depth will increase as we shrink to pitches available with immersion lithography, perhaps restricting layouts that can be printed with APSM technology. Mask manufacturers must develop methods to set and measure phase to necessary tolerance.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bob Gleason and Wen-Hao Cheng "Optical properties of alternating phase-shifting masks", Proc. SPIE 6349, Photomask Technology 2006, 63491B (20 October 2006); https://doi.org/10.1117/12.686147
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Cited by 4 scholarly publications.
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KEYWORDS
Diffraction

Photomasks

Etching

Silica

Polarization

Diffraction gratings

Phase measurement

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