Paper
23 October 2006 Advanced photomask repair technology for 65-nm lithography
Fumio Aramaki, Tomokazu Kozakai, Masashi Muramatsu, Yasuhiko Sugiyama, Yoshihiro Koyama, Osamu Matsuda, Katsumi Suzuki, Mamoru Okabe, Toshio Doi, Ryoji Hagiwara, Tatsuya Adachi, Anto Yasaka, Yoshiyuki Tanaka, Osamu Suga, Naoki Nishida, Youichi Usui
Author Affiliations +
Abstract
We have reported the FIB repair system with low acceleration voltage is applicable to 65nm generation photomasks. Repair technology beyond 65nm generation photomasks requires higher edge placement accuracy and more accurate shape. We developed two new functions, "Two Step Process" and "CAD Data Copy". "Two Step Process" consists of primary process and finishing process. The primary process is conventional process, but the finishing process is precise process to control repaired edge position with sub-pixel order. "Two Step Process" achieved edge placement repeatability less than 3nm in 3sigma. At "CAD Data Copy", defects are recognized with comparison between shape captured from a SIM image and that imported from a CAD system. "CAD Data Copy" reproduced nanometer features with nanometer accuracy. Thus the FIB repair system with low acceleration voltage achieves high performance enough to repair photomasks beyond 65nm generation by using "Two Step Process" and "CAD Data Copy".
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fumio Aramaki, Tomokazu Kozakai, Masashi Muramatsu, Yasuhiko Sugiyama, Yoshihiro Koyama, Osamu Matsuda, Katsumi Suzuki, Mamoru Okabe, Toshio Doi, Ryoji Hagiwara, Tatsuya Adachi, Anto Yasaka, Yoshiyuki Tanaka, Osamu Suga, Naoki Nishida, and Youichi Usui "Advanced photomask repair technology for 65-nm lithography", Proc. SPIE 6349, Photomask Technology 2006, 63491E (23 October 2006); https://doi.org/10.1117/12.691195
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KEYWORDS
Etching

Photomasks

Computer aided design

Lithography

Transmittance

Opacity

Process control

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